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Bulletin I27191 02/05
50MT060ULSA 50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Features
* Gen. 4 Ultrafast Speed IGBT Technology * HEXFRED TM Diode with UltraSoft Reverse Recovery * Very Low Conduction and Switching Losses * Optional SMD Thermistor (NTC) * Al2O3 DBC * Very Low Stray Inductance Design for High Speed Operation * UL approved ( file E78996 )
Ultrafast Speed IGBT
VCES = 600V IC = 100A, TC = 25C
Benefits
* Optimized for Welding, UPS and SMPS Applications * Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode * Low EMI, requires Less Snubbing * Direct Mounting to Heatsink * PCB Solderable Terminals * Very Low Junction-to-Case Thermal Resistance
MMTP
Absolute Maximum Ratings Parameters
VCES IC ICM ILM I
F
Max
600 @ TC = 25C @ TC = 122C 100 50 200 200 @ TC = 100C 48 200 20 2500 445 175 205 83 IGBT Diode @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
Units
V A
Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation
IFM VGE VISOL PD
V W
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V(BR)CES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage
Min Typ Max Units Test Conditions
600 1.69 1.96 1.88 2.31 2.55 2.24 6 - 13 22 29 0.25 1.64 1.56 6 1.82 1.74 250 nA V V GE = 0V, I C = 250A V GE = 15V, I C = 50A V GE = 15V, I C = 100A V GE = 15V, I C = 100A, T J = 150C I C = 0.5mA I R = 200A mV/C V CE = V GE , I C = 500A S mA V V CE = 50V, I C = 100A V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 150C I F = 100A, V GE = 0V I F = 100A, V GE = 0V, T J = 150C V GE = 20V
V GE(th) B VR
Gate Threshold Voltage Diode Reverse Breakdown Voltage
3 600
V GE(th) / Temperature Coeff. of T J Threshold Voltage g fe I CES V FM I GES Forward Transconductance Collector-to-Emiter Leaking Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Ct trr Irr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Junction Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current
Min Typ Max Units Test Conditions
370 64 163 0.7 1.7 2.4 1.1 2.5 3.6 555 96 245 1.2 2.6 3.8 1.7 3.8 5.5 nC IC = 100A VCC = 480V VGE = 15V IC = 50A, VCC = 480V, VGE = 15V, Rg = 5
Energy losses include tail and diode reverse recovery
mJ
mJ
IC = 50A, VCC = 480V, VGE = 15V Rg = 5, T J = 125C
Energy losses include tail and diode reverse recovery
9800 14700 602 121 118 99 6.5 320 236 903 182 177 150 9.8 735 ns A pF
VGE = 0V VCC = 30V f = 1.0 MHz Vr = 600V, f = 1.0 MHz VCC = 480V, IC = 50A di/dt = 200A/s
Qrr Diode Recovery Charge di(rec)M/dt Diode PeakRate of Fall of Recovery During tb
nC Rg = 5 A/s
2
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Thermistor Specifications (50MT060ULSTA only)
Parameters
R0
(1) (1) (2)
Min Typ
30 4000 R0 R1
Max Units Test Conditions
k K T0 = 25C T0 = 25C T1 = 85C Temperatures in kelvin
Resistance Sensitivity index of the thermistor material
(2)
(1) T0,T1 are thermistor's temperatures
= exp
[(1 T
1
0
T1
)],
Thermal- Mechanical Specifications
Parameters
TJ TSTG RthJC RthCS T Wt Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque to heatsink Weight
compound. Lubricated threads
Min
- 40 - 40 IGBT Diode Module (3)
Typ
Max
150 125 0.28 0.6
Units
C C/ W
0.06 3 10% 66 Nm g
(Heatsink Compound Thermal Conductivity = 1 W/mK)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
100
75
Duty cycle : 50% Tj = 125C Tsink = 90C Power Dissipation = 92W
Load Current ( A )
50
25
0 0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
100 TJ = 150C
1000.0
IC, Collector-to-Emitter Current ()
IC , Collector-to-Emitter Current (A)
T J = 150C
100.0
TJ = 25C 10
T J = 25C
10.0
Vge = 15V 380s Pulse Width 1 0.6 1.0 1.4 1.8 2.2
1.0 5.0 5.5
VCC = 50V 20s PULSE WIDTH
6.0 6.5
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
120
IC Maximum DC Collector Current (A)
VCE , Collector-to Emitter Voltage (V)
2
100 80 60 40 20 0 25 50 75 100 125 150 TC Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
IC = 100A
1.75
IC = 50A
1.5
1.25
IC = 25A
1 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
4
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.01
0.20 0.10 0.05 0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 C 3
Ri (C/W) 0.060 0.130 0.100
i (sec) 0.000968 0.019621 0.051755
0.001
1
2
3
Ci= i/Ri Ci i/Ri
0.0001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 C 3
Ri (C/W) 0.200 0.296 0.102
i (sec) 0.000993 0.038934 0.52648
1
2
3
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
14000 12000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1 MHZ C = C +C , C SHORTED ies ge gc ce Cres = Cgc
20.0
IC= 100A VCE = 480V
Cies
C, Capacitance (pF)
10000 8000
C =C +C oes ce gc
16.0
12.0
Coes
6000 4000 2000 0 1 10 100 1000
8.0
4.0
Cres
0.0 0 100 200 300 400
VDS, Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
5.0 VCC = 480V VGE = 15V 4.0
100 RG = 5.0 VGE = 15V
Total Switching Losses (mJ)
Switching Losses (mJ)
TJ = 25C I C = 100A
EOFF
VCC = 480V 10 I C = 100A I C = 50A
3.0
2.0
I C = 25A 1
EON
1.0
0.0 0 10 20 30
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , Gate Resistance ( )
T J , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
6
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
12
1000
10
VCC = 480V 8
IC, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG = 5.0 TJ = 125C VGE = 15V
VGE = 20V T J = 125
100
6
4
10
2
SAFE OPERATING AREA
1 1 10 100 1000
0 20 40 60 80 100
IC, Collector Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
Instantaneous Forward Current - I F ( A )
10
TJ = 150C TJ = 125C TJ = 25C
1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - VF ( V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
320
40
VR = 480V TJ = 125C TJ = 25C
280
30
240
IF = 100A IF = 50A IF = 25A
IF = 100A
trr - (ns)
200
IRRM - (A)
IF = 50A IF = 25A
20
160
120
10
80
VR = 480V TJ = 125C TJ = 25C
40 100 200 300 400 500 600
0 100 200 300 400 500 600
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
2000
10000
1600
IF = 100A IF = 50A IF = 25A
VR = 480V TJ = 125C TJ = 25C
IF = 100A IF = 50A IF = 25A
1200
di(rec)M/dt - (A/s)
VR = 480V TJ = 125C TJ = 25C 100 200 300 400 500 600
Q rr - (nC)
1000
800
400
0
100 100 200 300 400 500 600
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
8
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Outline Table
Circuit Diagram
Resistance in ohms
Dimensions in millimetres Note: unused terminals are not assembled in the package
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Ordering Information Table
Device Code
50
1
MT 060
2 3
U
4
LS
5
T
6
A
7
1 2 3 4 5 6
-
Current Rating (50 = 50A) Essential Part Number Voltage rating (060 = 600V) Speed/ Type Special Option (U = Ultra Fast IGBT)
Circuit Configuration (LS = Low Side Chopper)
! none = no special option !T
7 = Thermistor A = Al2O3 DBC Substrate
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/05
10
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